There is substantial interest in developing new classes of semiconductor and thermoelectric materials exploiting the properties of Bismuth. Such materials are increasingly important for the development of optoelectronic, thermoelectric and electronic devices. These include materials for laser diodes (used for optical communications, DVD systems etc.), light emitting diodes solar cells, transistors and spintronic devices.
Following on the success of the first international workshop on Bismuth-containing materials held in Michigan in 2010, this meeting will bring together groups undertaking research in the emerging area of Bismuth-containing materials and devices for a focussed three-day workshop.
This is an interdisciplinary meeting bringing together physicists, chemists, materials scientists and engineers together to address this important emerging area. Topics will focus on theoretical activities, epitaxial growth, characterisation (optical, electrical and structural) and device performance of interest to both academic and industrial researchers.
INVITED SPEAKERS
Su-Huai Wei, National Renewable Energy Laboratory (NREL), USA
Theoretical investigation of band structure of Bi containing isovalent III-V alloys and the validity of the band anticrossing model
Faebian Bastiman, University of Sheffield, UK
Developments in molecular beam epitaxy growth of GaAsBi/GaAs(100)
Kerstin Volz and Wolfgang Stolz, Philipps-University, Marburg, Germany
Challenges and prospects of metastable III/V-materials grown by MOVPE
Hédi Fitouri, Université de Monastir, Tunisia
Atmospheric-pressure metalorganic vapour phase epitaxy of GaAsBi alloy on different oriented GaAs substrates
Sebastian Imhof, Technische Universität Chemnitz, Germany
Luminescence Dynamics in Ga(AsBi)
Stefan Svensson, ARL, USA
The Prospects for use of Highly Mismatched Alloys in Long-Wavelength Infrared Detectors
ORGANISER
The workshop is organised by Prof. Stephen Sweeney, Advanced Technology Institute and Department of Physics, University of Surrey.
